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TISP4C0xxL1N Overvoltage Protector Series
Absolute Maximum Ratings, T A = 25 °C (Unless Otherwise Noted)
R a t i n g
‘4C015L1N
S y m b o l
V a l u e
±8
U n i t
Repetitive peak off-state voltage
‘4C020L1N
‘4C025L1N
V DRM
±12
±16
V
Non-repetitive peak impulse current (see Notes 1, 2 and 3)
‘4C035L1N
±24
8/20 μs (IEC 61000-4-5, 1.2/50 μs voltage, 8/20 current combination wave generator)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Junction temperature
Storage temperature range
I PPSM
T J
T stg
±30
±18
-40 to +150
-65 to +150
A
°C
°C
NOTES: 1. Initially the device must be in thermal equilibrium with T J = 25 °C.
2. The surge may be repeated after the device returns to its initial conditions.
3. Rated currents only apply if pins 1 & 5 (Tip) are connected together and pins 3 & 4 (Ring) are connected together.
Electrical Characteristics, T A = 25 °C (Unless Otherwise Noted)
I DRM
P a r a m e t e r
Repetitive peak off-state current
V D = V DRM
T e s t C o n d i t i o n s
M i n
T y p
M a x
±1
U n i t
μA
‘4C015L1N
±15
V (BO)
Breakover voltage
dv/dt = ±250 V/ms, R SOURCE = 300 Ω
‘4C020L1N
‘4C025L1N
±20
±25
V
‘4C035L1N
‘4C015L1N
± 5 0
±35
I H
Holding current
I T = ± 5 A , d i / d t = ± 3 0 m A / m s
‘4C020L1N
‘4C025L1N
±20
±50
m A
‘4C035L1N
‘4C015L1N
±50
15
C O
Off-state capacitance
f = 1 MHz, V d = 1 V rms, V D = 2 V
‘4C020L1N
‘4C025L1N
15
15
pF
‘4C035L1N
‘4C015L1N
3
15
Δ C
Delta-capacitance
f = 1 MHz, V d = 1 V rms, V D = 1 V to V DRM
‘4C020L1N
‘4C025L1N
3.5
3.5
pF
‘4C035L1N
4.5
JULY 2008 - REVISED MAY 2009
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications
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